Cypress CY7C1019BN - Manuals

CY7C1019BN Document #: 001-06425 Rev. ** Page 5 of 8 Write Cycle No. 1 (CE Controlled) [12, 13] Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [12, 13] Notes: 12. Data I/O is high impedance if OE = V IH . 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-im...

CY7C1019BN Document #: 001-06425 Rev. ** Page 6 of 8 Write Cycle No. 3 (WE Controlled, OE LOW) [13] Switching Waveforms (continued) DATA VALID t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE CE ADDRESS WE DATA I/O NOTE 14 Truth Table CE OE WE I/O 0 –I/O 7 Mode Power H X X High Z Power-Down S...

CY7C1019BN Document #: 001-06425 Rev. ** Page 7 of 8 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the useof any circuitry other than circuitry embodied in a Cypress pro...

CY7C1019BN Document #: 001-06425 Rev. ** Page 8 of 8 Document History Page Document Title: CY7C1019BN 128K x 8 Static RAMDocument Number: 001-06425 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 423847 See ECN NXR New Data Sheet [+] Feedback