Cypress CY62128E - Manual
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Table of Contents:
- Page 2 – MoBL; Pin Configuration; STSOP; TSOP I
- Page 3 – Maximum Ratings; Electrical Characteristics
- Page 4 – AC Test Loads and Waveform; Data Retention Characteristics
- Page 5 – Switching Characteristics
- Page 6 – Switching Waveforms; Figure 1. Read Cycle 1
- Page 7 – Truth Table; Data Out; Data In; Selected, Outputs Disabled
- Page 8 – Package Diagrams; Industrial
- Page 11 – Document History Page
- Page 12 – Worldwide Sales and Design Support
MoBL
®
CY62128E
1-Mbit (128K x 8) Static RAM
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 38-05485 Rev. *F
Revised August 4, 2008
Features
■
Very high speed: 45 ns
■
Temperature ranges
❐
Industrial: –40°C to +85°C
❐
Automotive-A: –40°C to +85°C
❐
Automotive-E: –40°C to +125°C
■
Voltage range: 4.5V to 5.5V
■
Pin compatible with CY62128B
■
Ultra low standby power
❐
Typical standby current: 1
μ
A
❐
Maximum standby current: 4
μ
A (Industrial)
■
Ultra low active power
❐
Typical active current: 1.3 mA at f = 1 MHz
■
Easy memory expansion with CE
1
, CE
2,
and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC, and
32-pin TSOP I packages
Functional Description
The CY62128E
is a high performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device into standby mode reduces power consumption by more
than 99 percent when deselected (CE
1
HIGH or CE
2
LOW). The
eight input and output pins (IO
0
through IO
7
) are placed in a high
impedance state when the device is deselected (CE
1
HIGH or
CE
2
LOW), the outputs are disabled (OE HIGH), or a write
operation is in progress (CE
1
LOW and CE
2
HIGH and WE LOW)
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO
pins (IO
0
through IO
7
) is then written into the location specified
on the address pins (A
0
through A
16
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the IO pins.
A0
IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A1
A2
A3
A4
A5
A6
A7
A8
A9
A
12
SENSE AMPS
POWER
DOWN
WE
OE
A
13
A
14
A
15
A
16
ROW DECODER
COLUMN DECODER
128K x 8
ARRAY
INPUT BUFFER
A10
A11
CE1
CE2
Logic Block Diagram
Note
1. For best practice recommendations, refer to the Cypress application note
“System Design Guidelines”
at
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Summary
MoBL ® CY62128E Document #: 38-05485 Rev. *F Page 2 of 12 Pin Configuration [2] Product Portfolio Product Range V CC Range (V) Speed (ns) Power Dissipation Operating I CC (mA) Standby I SB2 (µA) f = 1MHz f = f max Min Typ [3] Max Typ [3] Max Typ [3] Max Typ [3] Max CY62128ELL Ind’l/Auto-A 4.5 5.0 5....
MoBL ® CY62128E Document #: 38-05485 Rev. *F Page 3 of 12 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.Storage Temperature ................................. –65°C to +150°CAmbient Temperature with Power Applied ................
MoBL ® CY62128E Document #: 38-05485 Rev. *F Page 4 of 12 AC Test Loads and Waveform Thermal Resistance [9] Parameter Description Test Conditions SOIC Package STSOP Package TSOP Package Unit Θ JA Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, two-layer printed circui...
