Cypress CY7C1387D - Manual

Cypress CY7C1387D

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Table of Contents:

  • Page 3 – Pin Configurations
  • Page 5 – TMS
  • Page 6 – Pin Definitions
  • Page 9 – Truth Table
  • Page 11 – Disabling the JTAG Feature; TAP Controller State Diagram; TAP Controller Block; TAP Controller Block Diagram; Performing a TAP Reset; TAP Registers; Instruction Register
  • Page 12 – Identification Register; TAP Instruction Set; Identification
  • Page 13 – Reserved; TAP Timing
  • Page 14 – TDO; TAP DC Electrical Characteristics And Operating Conditions
  • Page 16 – 19-Ball BGA Boundary Scan Order; Ball ID; Internal
  • Page 17 – 65-Ball BGA Boundary Scan Order
  • Page 18 – Electrical Characteristics
  • Page 20 – Switching Characteristics
  • Page 21 – Switching Waveforms; Read Cycle Timing
  • Page 22 – Write Cycle Timing
  • Page 23 – Read/Write Cycle Timing
  • Page 24 – ZZ Mode Timing; CLK
  • Page 25 – Ordering Information; for actual products offered.
  • Page 27 – Package Diagrams
  • Page 30 – Document History Page; SRAM
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18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM

CY7C1386D, CY7C1386F

CY7C1387D, CY7C1387F

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document Number: 38-05545 Rev. *E

Revised Feburary 09, 2007

Features

• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (double-cycle deselect)
• Depth expansion without wait state
• 3.3V core power supply (V

DD

)

• 2.5V or 3.3V IO power supply (V

DDQ)

• Fast clock-to-output times

— 2.6 ns (for 250 MHz device)

• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel

®

Pentium

®

interleaved or linear burst sequences

• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• CY7C1386D/CY7C1387D available in JEDEC-standard

Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball
FBGA package. CY7C1386F/CY7C1387F available in
Pb-free and non Pb-free 119-ball BGA package

• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option

Functional Description

[1]

The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F
SRAM integrates 512K x 36/1M x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive edge triggered clock
input (CLK). The synchronous inputs include all addresses, all
data inputs, address-pipelining chip enable (CE

1

), depth

expansion chip enables (CE

2

and

CE

3

[2]

), burst control inputs

(ADSC, ADSP, and ADV), write enables (BW

X

, and BWE), and

global write (GW). Asynchronous inputs include the output
enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see

Pin Configurations on page 3

and

Truth Table

[4, 5, 6, 7, 8]

on page 9

for further details). Write cycles can be

one to four bytes wide as controlled by the byte write control
inputs. GW active LOW causes all bytes to be written. This
device incorporates an additional pipelined enable register
which delays turning off the output buffers an additional cycle
when a deselect is executed.This feature allows depth
expansion without penalizing system performance.
The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F
operates from a +3.3V core power supply while all outputs
operate with a +3.3V or +2.5V supply. All inputs and outputs
are JEDEC-standard and JESD8-5-compatible.

Selection Guide

250 MHz

200 MHz

167 MHz

Unit

Maximum Access Time

2.6

3.0

3.4

ns

Maximum Operating Current

350

300

275

mA

Maximum CMOS Standby Current

70

70

70

mA

Notes

1. For best practices or recommendations, please refer to the Cypress application note AN1064,

SRAM System Design Guidelines

on

www.cypress.com

.

2. CE

3

and CE

2

are for TQFP and 165 FBGA packages only. 119 BGA is offered only in Single Chip Enable.

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Summary

Page 3 - Pin Configurations

CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Document Number: 38-05545 Rev. *E Page 3 of 30 Pin Configurations A A A A A 1 A 0 NC/7 2 M NC/3 6 M V SS V DD A A A A A A A A DQP B DQ B DQ B V DDQ V SSQ DQ B DQ B DQ B DQ B V SSQ V DDQ DQ B DQ B V SS NCV DD ZZDQ A DQ A V DDQ V SSQ DQ A DQ A DQ A DQ A V SSQ ...

Page 5 - TMS

CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Document Number: 38-05545 Rev. *E Page 5 of 30 Pin Configurations (continued) 165-Ball FBGA Pinout (3 Chip Enable) CY7C1386D (512K x 36) 2 3 4 5 6 7 1 ABCD E F G H J K L M N P R TDO NC/288MNC/144M DQP C DQ C DQP D NC DQ D CE 1 BW B CE 3 BW C BWE A CE 2 DQ C ...

Page 6 - Pin Definitions

CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Document Number: 38-05545 Rev. *E Page 6 of 30 Pin Definitions Name IO Description A 0 , A 1 , A Input- Synchronous Address inputs used to select one of the address locations . Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE 1 , C...

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