Cypress CY7C1018DV33 - Manuals

CY7C1018DV33 Document #: 38-05465 Rev. *D Page 5 of 9 Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min. Max. Unit V DR V CC for Data Retention 2 V I CCDR Data Retention Current V CC = V DR = 2.0V, CE > V CC – 0.3V, V IN > V CC – 0.3V or V IN < 0...

CY7C1018DV33 Document #: 38-05465 Rev. *D Page 6 of 9 Write Cycle No. 1 (CE Controlled) [16, 17] Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [16, 17] Switching Waveforms (continued) t WC DATA VALID t AW t SA t PWE t HA t HD t SD t SCE t SCE CE WE DATA I/O ADDRESS t HD t SD t PWE t SA t H...

CY7C1018DV33 Document #: 38-05465 Rev. *D Page 7 of 9 Write Cycle No. 3 (WE Controlled, OE LOW) [11, 17] Truth Table CE OE WE I/O 0 –I/O 7 Mode Power H X X High-Z Power-down Standby (I SB ) L L H Data Out Read Active (I CC ) L X L Data In Write Active (I CC ) L H H High-Z Selected, Outputs Disabled ...

CY7C1018DV33 Document #: 38-05465 Rev. *D Page 8 of 9 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the useof any circuitry other than circuitry embodied in a Cypress pr...

CY7C1018DV33 Document #: 38-05465 Rev. *D Page 9 of 9 Document History Page Document Title: CY7C1018DV33, 1-Mbit (128K x 8) Static RAM Document Number: 38-05465 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 201560 See ECN SWI Advance Information data sheet for C9 IPP *A 238471 See...