Page 2 - Product Portfolio; Pin Configuration; Notes
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 2 of 11 Product Portfolio Product V CC Range (V) Speed (ns) Power Dissipation Operating I CC (mA) Standby I SB2 (µA) f = 1MHz f = f max Min Typ [2] Max Typ [2] Max Typ [2] Max Typ [2] Max CY62167DV18LL 1.65 1.8 1.95 55 1.5 5 15 30 2.5 20 Pin Confi...
Page 3 - DC Electrical Characteristics; Capacitance
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 3 of 11 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.Storage Temperature ................................. –65°C to +150°CAmbient Temperature with Power Applied .........
Page 4 - CE
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 4 of 11 Thermal Resistance [7] Parameter Description Test Conditions VFBGA Unit Θ JA Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board 55 ° C/W Θ JC Thermal Resistance (Junction to Case...
Page 5 - Switching Characteristics
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 5 of 11 Switching Characteristics (Over the Operating Range) [10] Parameter Description 55 ns Unit Min Max Read Cycle t RC Read Cycle Time 55 ns t AA Address to Data Valid 55 ns t OHA Data Hold from Address Change 10 ns t ACE CE 1 LOW and CE 2 HIG...
Page 6 - Switching Waveforms; Read Cycle 1
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 6 of 11 Switching Waveforms Read Cycle 1 (Address Transition Controlled) [14, 15] Read Cycle 2 (OE Controlled) [15, 16] PREVIOUS DATA VALID DATA VALID RC t AA t OHA t RC ADDRESS DATA OUT 50% 50% DATA VALID t RC t ACE t DOE t LZOE t LZCE t PU HIGH ...
Page 7 - or CE
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 7 of 11 Write Cycle 1 (WE Controlled) [13, 17, 18] Write Cycle 2 (CE 1 or CE 2 Controlled) [13, 17, 18] Switching Waveforms (continued) t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE VALID DATA t BW NOTE 19 CE 1 ADDRESS CE 2 WE DATA IO OE BHE/BL...
Page 8 - HZWE
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 8 of 11 Write Cycle 3 (WE Controlled, OE LOW) [18] Write Cycle 4 (BHE/BLE Controlled, OE LOW) [18] Switching Waveforms (continued) VALID DATA t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW NOTE 19 CE 1 ADDRESS CE 2 WE DATA IO BHE/BLE...
Page 10 - Package Diagrams
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 10 of 11 © Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for theuse of any circuitry other than circuitry embodied in...
Page 11 - Document History Page; Change
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 11 of 11 Document History Page Document Title: CY62167DV18 MoBL ® , 16-Mbit (1M x 16) Static RAM Document Number: 38-05326 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 118406 09/30/02 GUG New Data Sheet *A 123690 02/11/03 DPM C...