Cypress CY62167DV18 - Manual
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Table of Contents:
- Page 2 – Product Portfolio; Pin Configuration; Notes
- Page 3 – DC Electrical Characteristics; Capacitance
- Page 4 – CE
- Page 5 – Switching Characteristics
- Page 6 – Switching Waveforms; Read Cycle 1
- Page 7 – or CE
- Page 8 – HZWE
- Page 10 – Package Diagrams
- Page 11 – Document History Page; Change
16-Mbit (1M x 16) Static RAM
CY62167DV18 MoBL
®
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 38-05326 Rev. *C
Revised April 25, 2007
Features
• Very high speed: 55 ns
• Wide voltage range: 1.65V–1.95V
• Ultra low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 15 mA @ f = f
max
• Ultra low standby power
• Easy memory expansion with CE
1
, CE
2
, and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 48-ball VFBGA package
Functional Description
The CY62167DV18 is a high performance CMOS static RAM
organized as 1M words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life
™
(MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. Placing the device into standby mode reduces power
consumption by more than 99% when deselected (CE
1
HIGH
or CE
2
LOW or both BHE and BLE are HIGH). The input and
output pins (IO
0
through IO
15
) are placed in a high impedance
state when:
• Deselected (CE
1
HIGH or CE
2
LOW)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable (BHE) and Byte Low Enable (BLE)
are disabled (BHE, BLE HIGH)
• Write operation is active (CE
1
LOW, CE
2
HIGH and WE
LOW)
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If BLE is LOW, then
data from IO pins (IO
0
through IO
7
) is written into the location
specified on the address pins (A
0
through A
19
). If BHE is LOW
then data from IO pins (IO
8
through IO
15
) is written into the
location specified on the address pins (A
0
through A
19
).
To read from the device, take Chip Enables (CE
1
LOW and
CE
2
HIGH) and OE LOW while forcing the WE HIGH. If BLE
is LOW, then data from the memory location specified by the
address pins appear on IO
0
to IO
7
. If BHE is LOW, then data
from memory appears on IO
8
to IO
15
. See the
for a complete description of read and write modes.
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at
Logic Block Diagram
1M × 16
RAM Array
IO
0
–IO
7
ROW DECODER
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
SENSE AMPS
DATA IN DRIVERS
OE
A
4
A
3
IO
8
–IO
15
WE
BLE
BHE
A
16
A
0
A
1
A
17
A
9
A
18
A
10
CE
2
CE
1
A
19
BYTE
Power Down
Circuit
BHE
BLE
CE
2
CE
1
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Summary
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 2 of 11 Product Portfolio Product V CC Range (V) Speed (ns) Power Dissipation Operating I CC (mA) Standby I SB2 (µA) f = 1MHz f = f max Min Typ [2] Max Typ [2] Max Typ [2] Max Typ [2] Max CY62167DV18LL 1.65 1.8 1.95 55 1.5 5 15 30 2.5 20 Pin Confi...
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 3 of 11 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.Storage Temperature ................................. –65°C to +150°CAmbient Temperature with Power Applied .........
CY62167DV18 MoBL ® Document #: 38-05326 Rev. *C Page 4 of 11 Thermal Resistance [7] Parameter Description Test Conditions VFBGA Unit Θ JA Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board 55 ° C/W Θ JC Thermal Resistance (Junction to Case...
