Cypress CY62148BN - Manuals

CY62148BN MoBL ® Document #: 001-06517 Rev. *A Page 5 of 10 Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min. Typ. [1] Max. Unit V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current Com’l LL No input may exceed V CC + 0.3V V CC = V DR = 3.0V ...

CY62148BN MoBL ® Document #: 001-06517 Rev. *A Page 6 of 10 Write Cycle No. 1 (CE Controlled) [13] Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [13, 14] Notes: 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.14. Data I/O is high-impedanc...

CY62148BN MoBL ® Document #: 001-06517 Rev. *A Page 7 of 10 Write Cycle No.3 (WE Controlled, OE LOW) [13, 14] Truth Table CE OE WE I/O 0 –I/O 7 Mode Power H X X High Z Power-Down Standby (I SB ) L L H Data Out Read Active (I CC ) L X L Data In Write Active (I CC ) L H H High Z Selected, Outputs Disa...

CY62148BN MoBL ® Document #: 001-06517 Rev. *A Page 8 of 10 Package Diagrams 0.546[13.868] 0.440[11.176] 0.101[2.565] 0.050[1.270] 0.014[0.355] 0.118[2.997] 0.004[0.102] 0.047[1.193] 0.006[0.152] 0.023[0.584] 0.793[20.142] 0.450[11.430] 0.566[14.376] 0.111[2.819] 0.817[20.751] BSC. 0.020[0.508] MIN....

CY62148BN MoBL ® Document #: 001-06517 Rev. *A Page 10 of 10 Document History Page Document Title: CY62148BN MoBL ® 4-Mbit (512K x 8) Static RAM Document Number: 001-06517 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 426504 See ECN NXR New Data Sheet *A 485639 See ECN VKN Correct...