Cypress STK12C68 - Manuals - manualsarea.com

Page 3 - Figure 2; Figure 2. AutoStore Mode

STK12C68 Document Number: 001-51027 Rev. ** Page 3 of 20 Device Operation The STK12C68 nvSRAM is made up of two functional compo-nents paired in the same physical cell. These are an SRAMmemory cell and a nonvolatile QuantumTrap cell. The SRAMmemory cell operates as a standard fast static RAM. Data i...

Page 4 - Figure 3. AutoStore Inhibit Mode; AutoStore Inhibit Mode; Figure 3; Software STORE

STK12C68 Document Number: 001-51027 Rev. ** Page 4 of 20 Figure 3. AutoStore Inhibit Mode If the power supply drops faster than 20 us/volt before Vccreaches V SWITCH , then a 2.2 ohm resistor should be connected between V CC and the system supply to avoid momentary excess of current between V CC and...

Page 5 - Figure 4; Preventing Store

STK12C68 Document Number: 001-51027 Rev. ** Page 5 of 20 3. Read address 0x0AAA, Valid READ 4. Read address 0x1FFF, Valid READ 5. Read address 0x10F0, Valid READ 6. Read address 0x0F0E, Initiate RECALL cycle Internally, RECALL is a two step procedure. First, the SRAM datais cleared; then, the nonvol...

Page 6 - Best Practices

STK12C68 Document Number: 001-51027 Rev. ** Page 6 of 20 Best Practices nvSRAM products have been used effectively for over 15 years.While ease-of-use is one of the product’s main system values,experience gained working with hundreds of applications hasresulted in the following suggestions as best p...

Page 7 - DC Electrical Characteristics

STK12C68 Document Number: 001-51027 Rev. ** Page 7 of 20 Maximum Ratings Exceeding maximum ratings may shorten the useful life of thedevice. These user guidelines are not tested. Storage Temperature ................................. –65 ° C to +150 ° C Temperature under Bias ...........................

Page 8 - Thermal Resistance; AC Test Conditions

STK12C68 Document Number: 001-51027 Rev. ** Page 8 of 20 Data Retention and Endurance Parameter Description Min Unit DATA R Data Retention 100 Years NV C Nonvolatile STORE Operations 1,000 K Capacitance In the following table, the capacitance parameters are listed. [6] Parameter Description Test Con...

Page 9 - AC Switching Characteristics; SRAM Read Cycle; Switching Waveforms

STK12C68 Document Number: 001-51027 Rev. ** Page 9 of 20 AC Switching Characteristics SRAM Read Cycle Parameter Description 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t ACE t ELQV Chip Enable Access Time 25 35 45 ns t RC [7] t AVAV, t ELEH Read Cycle Time 25 35 45 ns t AA [...

Page 10 - SRAM Write Cycle

STK12C68 Document Number: 001-51027 Rev. ** Page 10 of 20 SRAM Write Cycle Parameter Description 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t WC t AVAV Write Cycle Time 25 35 45 ns t PWE t WLWH, t WLEH Write Pulse Width 20 25 30 ns t SCE t ELWH, t ELEH Chip Enable To End of...

Page 14 - Part Numbering nomenclature; Lead Finish; Ordering Information; Ordering Code; Commercial

STK12C68 Document Number: 001-51027 Rev. ** Page 14 of 20 Part Numbering nomenclature Packaging Option:TR = Tape and ReelBlank = Tube Speed:25 - 25 ns35 - 35 ns Package:S = Plastic 28-pin 330 mil SOIC STK12C68 - S F 45 I TR Temperature Range: C - Commercial (0 to 70°C) P W = Plastic 28-pin 600 mil D...

Page 16 - Package Diagrams

STK12C68 Document Number: 001-51027 Rev. ** Page 16 of 20 Package Diagrams Figure 14. 28-Pin (330 Mil) SOIC (51-85058) Figure 15. 28-Pin (300 Mil) PDIP (51-85014) 51-85058 *A 51-85014 *D [+] Feedback

Page 20 - Document History Page; Worldwide Sales and Design Support; Change

Document Number: 001-51027 Rev. ** Revised January 30, 2009 Page 20 of 20 AutoStore and QuantumTrap are registered trademarks of Cypress Semiconductor Corporation. All products and company names mentioned in this document may be the trademarks of their respectiveholders. STK12C68 © Cypress Semicondu...