Page 2 - rra; rray
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 2 of 30 Logic Block Diagram (CY7C1516KV18) Logic Block Diagram (CY7C1527KV18) WriteReg WriteReg CLK A (21:0) Gen. K K Control Logic Address Register Read Add . Decode Read Data Reg. R/W Output Logic Reg. Reg...
Page 4 - Pin Configuration
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 4 of 30 Pin Configuration The pin configurations for CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. [1] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1516KV18 (8M x 8) 1 2 3 4 5 6 7 8 9 10 ...
Page 6 - Pin Definitions
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 6 of 30 Pin Definitions Pin Name I/O Pin Description DQ [x:0] Input Output- Synchronous Data Input Output Signals . Inputs are sampled on the rising edge of K and K clocks during valid write operations. Thes...
Page 8 - Functional Overview; Write Operations
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 8 of 30 Functional Overview The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and a...
Page 9 - Programmable Impedance; Echo Clocks; Switching; PLL; Application Example; Figure 1; Figure 1. Application Example; ohms; BUS
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 9 of 30 Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V SS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the valu...
Page 10 - Write Cycle Descriptions
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 10 of 30 Truth Table The truth table for the CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. [2, 3, 4, 5, 6, 7] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input wr...
Page 12 - Disabling the JTAG Feature; Test Access Port—Test Clock; TAP Registers; Instruction Register; Boundary Scan Register; TAP Instruction Set
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 12 of 30 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The T...
Page 14 - TAP Controller State Diagram; The state diagram for the TAP controller follows.
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 14 of 30 TAP Controller State Diagram The state diagram for the TAP controller follows. [9] TEST-LOGICRESET TEST-LOGIC/IDLE SELECTDR-SCAN CAPTURE-DR SHIFT-DR EXIT1-DR PAUSE-DR EXIT2-DR UPDATE-DR 1 0 1 1 0 1 ...
Page 16 - Figure 2
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 16 of 30 TAP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL...
Page 18 - Boundary Scan Order; Bump ID; Internal
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 18 of 30 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R...
Page 19 - Power Up Sequence in DDR-II SRAM; Power Up Sequence; Figure 3. Power Up Waveforms
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 19 of 30 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. Power Up Sequence ■ Apply power and drive DOFF either HIGH or...
Page 20 - DC Electrical Characteristics
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 20 of 30 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.Storage Temperature ................................. –65°C to +150°CAmbient ...
Page 21 - AC Electrical Characteristics
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 21 of 30 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200 MHz (x8) 370 mA (x9) 370 (x18) 380 (x36) 450 167 MHz (x8) 340 mA (x9) 340 (x18) 340 (x36) 400 I SB1 Automatic Power ...
Page 22 - Capacitance; Thermal Resistance
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 22 of 30 Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Test Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V...
Page 23 - Switching Characteristics
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 23 of 30 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consortium Parameter Description 333 MHz 300 MHz 250 MHz 200 MHz 167 MHz Unit Min Max Min Max Min Max Min Max Min Max t ...
Page 25 - Switching Waveforms; LD; CQD
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 25 of 30 Switching Waveforms Figure 5. Read/Write/Deselect Sequence [26, 27, 28] READ READ READ NOP NOP WRITE WRITE NOP 1 2 3 4 5 6 7 8 9 10 Q40 t KHCH tCO t tHC t tHA tSD tHD t KHCH tSD tHD DON’T CARE UNDEF...
Page 26 - Ordering Information
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 26 of 30 Ordering Information The following table lists all possible speed, package, and temperature range options supported for these devices. Note that some options listed may not be available for order en...
Page 29 - Package Diagram
CY7C1516KV18, CY7C1527KV18CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev. *E Page 29 of 30 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0...
Page 30 - Document History Page; Burst Architecture
Document Number: 001-00437 Rev. *E Revised March 30, 2009 Page 30 of 30 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this documentare the trademarks of their respective holders. CY7...