Page 2 - CQ; x 8 Array; CQ; x 9 Arra
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 2 of 30 Logic Block Diagram (CY7C1422BV18) Logic Block Diagram (CY7C1429BV18) 2M x 8 Array CLK A (20:0) Gen. K K Control Logic Address Register D [7:0] Re ad Add. Decode Read Data Reg. LD Q [7:0] Reg. Reg. Reg. 8...
Page 4 - Pin Configuration
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 4 of 30 Pin Configuration The pin configuration for CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 follow. [1] 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1422BV18 (4M x 8) 1 2 3 4 5 6 7 8 9 10 11 A C...
Page 6 - Pin Definitions; Application Example
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 6 of 30 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. CY7C1422BV18 - D [7:0] CY7C1429BV18 -...
Page 8 - Functional Overview; Write Operations
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 8 of 30 Functional Overview The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, andCY7C1424BV18 are synchronous pipelined Burst SRAMsequipped with a DDR-II Seperate IO interface, which operateswith a read latency of on...
Page 9 - Echo Clocks; Switching Characteristics; DLL; AN5062, DLL Considerations in; Figure 1; Figure 1. Application Example
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 9 of 30 Echo Clocks Echo clocks are provided on the DDR-II to simplify data captureon high-speed systems. Two echo clocks are generated by theDDR-II. CQ is referenced with respect to C and CQ is referencedwith re...
Page 12 - Disabling the JTAG Feature; Test Access Port—Test Clock; TAP Registers; Instruction Register; Boundary Scan Register; TAP Instruction Set
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 12 of 30 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test AccessPort (TAP) in the FBGA package. This part is fully compliant withIEEE Standard #1149.1-2001. The TAP oper...
Page 13 - and t; ). The SRAM clock input might not be captured
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 13 of 30 IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code intothe instruction register. It also places the instruction registerbetween the TDI and TDO pins and shifts the IDCODE out of thedevice...
Page 14 - TAP Controller State Diagram; The state diagram for the TAP controller follows.; RESET
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 14 of 30 TAP Controller State Diagram The state diagram for the TAP controller follows. [9] TEST-LOGIC RESET TEST-LOGIC/ IDLE SELECT DR-SCAN CAPTURE-DR SHIFT-DR EXIT1-DR PAUSE-DR EXIT2-DR UPDATE-DR 1 0 1 1 0 1 0 ...
Page 16 - Figure 2
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 16 of 30 TAP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL TCK ...
Page 18 - Boundary Scan Order; Bump ID; Internal
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 18 of 30 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 1...
Page 19 - Power Up Sequence in DDR-II SRAM; Power Up Sequence; Figure 3. Power Up Waveforms
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 19 of 30 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be powered up and initialized in apredefined manner to prevent undefined operations. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (...
Page 20 - Maximum Ratings; Operating Range; DC Electrical Characteristics
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 20 of 30 Maximum Ratings Exceeding maximum ratings may impair the useful life of thedevice. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temp...
Page 21 - AC Electrical Characteristics
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 21 of 30 I DD V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200MHz (x8) 600 mA (x9) 600 (x18) 600 (x36) 665 167MHz (x8) 500 mA (x9) 500 (x18) 500 (x36) 560 I SB1 Automatic Power down Current...
Page 22 - Capacitance; Thermal Resistance
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 22 of 30 Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Test Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD =...
Page 25 - Switching Waveforms; LD; NOP
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 25 of 30 Switching Waveforms Figure 5. Read/Write/Deselect Sequence [27, 28, 29] K 1 2 3 4 5 6 7 8 K LD R/W A Q D C C# READ(burst of 2) READ(burst of 2) READ(burst of 2) WRITE(burst of 2) WRITE(burst of 2) t KHCH...
Page 26 - Ordering Information; for actual products offered.
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 26 of 30 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) O...
Page 29 - Package Diagram
CY7C1422BV18, CY7C1429BV18CY7C1423BV18, CY7C1424BV18 Document #: 001-07035 Rev. *D Page 29 of 30 Package Diagram Figure 6. 165-ball FBGA (15 x 17 x 1.4 mm), 51-85195 ! 0).#/2.%2 ¼ ¼ 8 -#!" -# " ! 8 ¼ -!8 3%!4).'0,!.% ¼ # # 0).#/2.%2 4/06)%7 "/44/-6)%7 " # $ % & ' ( * + , - . 0...
Page 30 - Document History Page; SUBMISSION
Document #: 001-07035 Rev. *D Revised June 16, 2008 Page 30 of 30 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this documentare the trademarks of their respective holders. CY7C1422B...