Cypress CY7C1006D - Manuals

Page 2 - Unit; Top View

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 2 of 11 Pin Configuration [2] Selection Guide CY7C106D-10 CY7C1006D-10 Unit Maximum Access Time 10 ns Maximum Operating Current 80 mA Maximum Standby Current 3 mA 123456789 11 14 15 16 20191817 21 242322 1213 25 282726 A 7 A 0 A 1 A 2 A 3 A 4 A 15...

Page 3 - Electrical Characteristics

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 3 of 11 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.Storage Temperature ................................. –65°C to +150°CAmbient Temperature with Power Applied .........

Page 4 - Capacitance; Thermal Resistance; AC Test Loads and Waveforms

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 4 of 11 Capacitance [4] Parameter Description Test Conditions Max Unit C IN : Addresses Input Capacitance T A = 25 ° C, f = 1 MHz, V CC = 5.0V 7 pF C IN : Controls 10 pF C OUT Output Capacitance 10 pF Thermal Resistance [4] Parameter Description T...

Page 5 - Switching Characteristics

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 5 of 11 Switching Characteristics (Over the Operating Range) [6] Parameter Description 7C106D-10 7C1006D-10 Unit Min Max Read Cycle t power [7] V CC (typical) to the first access 100 µ s t RC Read Cycle Time 10 ns t AA Address to Data Valid 10 ns ...

Page 6 - Switching Waveforms

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 6 of 11 Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min Max Unit V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current V CC = V DR = 2.0V, CE > V CC – 0.3V, V IN > V CC – 0.3V or V IN...

Page 8 - Truth Table; Ordering Information; DATA VALID

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 8 of 11 Write Cycle No. 3 (WE Controlled, OE LOW) [12, 19] Truth Table CE OE WE Input/Output Mode Power H X X High Z Power-Down Standby (I SB ) L L H Data Out Read Active (I CC ) L X L Data In Write Active (I CC ) L H H High Z Selected, Outputs Di...

Page 9 - Package Diagrams

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 9 of 11 Package Diagrams Figure 1. 28-pin (300-Mil) Molded SOJ, 51-85031 MIN.MAX. PIN 1 ID 0.2910.300 0.050 TYP. 0.0070.013 0.3300.350 0.1200.140 0.025 MIN. 0.2620.272 0.6970.713 0.0130.019 0.0140.020 0.032 0.026 A A DETAIL EXTERNAL LEAD DESIGN OP...

Page 10 - DIMENSIONS IN INCHES

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 10 of 11 © Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility forthe use of any circuitry other than circuitry embodied in...

Page 11 - Document History Page; Change

CY7C106D CY7C1006D Document #: 38-05459 Rev. *E Page 11 of 11 Document History Page Document Title: CY7C106D/CY7C1006D, 1-Mbit (256K x 4) Static RAM Document Number: 38-05459 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 201560 See ECN SWI Advance information data sheet for C9 IPP...