Cypress CY14E256L - Manuals

Page 2 - SS

CY14E256L Document Number: 001-06968 Rev. *F Page 2 of 18 Pin Configurations Figure 1. Pin Diagram: 32-Pin SOIC/DIP Pin Definitions Pin Name Alt IO Type Description A 0 –A 14 Input Address Inputs. Used to select one of the 32,768 bytes of the nvSRAM. DQ 0 -DQ 7 Input or Output Bidirectional Data IO ...

Page 3 - Figure 2; AutoStore Inhibit mode; Figure 3; Figure 2. AutoStore Mode

CY14E256L Document Number: 001-06968 Rev. *F Page 3 of 18 Device Operation The CY14E256L nvSRAM is made up of two functional compo-nents paired in the same physical cell. These are an SRAMmemory cell and a nonvolatile QuantumTrap cell. The SRAMmemory cell operates as a standard fast static RAM. Data...

Page 4 - Figure 3. AutoStore Inhibit Mode

CY14E256L Document Number: 001-06968 Rev. *F Page 4 of 18 Hardware STORE (HSB) Operation The CY14E256L provides the HSB pin for controlling andacknowledging the STORE operations. The HSB pin is used torequest a hardware STORE cycle. When the HSB pin is drivenLOW, the CY14E256L conditionally initiate...

Page 5 - STORE; Low Average Active Power; Figure 4; Preventing Store

CY14E256L Document Number: 001-06968 Rev. *F Page 5 of 18 Data Protection The CY14E256L protects data from corruption during lowvoltage conditions by inhibiting all externally initiated STOREand WRITE operations. The low voltage condition is detectedwhen V CC is less than V SWITCH . If the CY14E256L...

Page 6 - Best Practices; Notes

CY14E256L Document Number: 001-06968 Rev. *F Page 6 of 18 Best Practices nvSRAM products have been used effectively for over 15 years.While ease of use is one of the product’s main system values,experience gained working with hundreds of applications hasresulted in the following suggestions as best ...

Page 7 - DC Electrical Characteristics

CY14E256L Document Number: 001-06968 Rev. *F Page 7 of 18 Maximum Ratings Exceeding maximum ratings may shorten the useful life of thedevice. These user guidelines are not tested. Storage Temperature ................................. –65 ° C to +150 ° C Ambient Temperature withPower Applied ...........

Page 8 - Output; Note

CY14E256L Document Number: 001-06968 Rev. *F Page 8 of 18 V OL Output LOW Voltage I OUT = 8 mA 0.4 V V BL Logic ‘0’ Voltage on HSB Output I OUT = 3 mA 0.4 V V CAP Storage Capacitor Between V CAP pin and Vss, 6V rated. 68 µF +20% nom. 54 260 uF Data Retention and Endurance Parameter Description Min U...

Page 9 - AC Switching Characteristics; SRAM Read Cycle; Switching Waveforms

CY14E256L Document Number: 001-06968 Rev. *F Page 9 of 18 AC Switching Characteristics SRAM Read Cycle Parameter Description 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t ACE t ELQV Chip Enable Access Time 25 35 45 ns t RC [9] t AVAV, t ELEH Read Cycle Time 25 35 45 ns t AA ...

Page 10 - SRAM Write Cycle

CY14E256L Document Number: 001-06968 Rev. *F Page 10 of 18 SRAM Write Cycle Parameter Description 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t WC t AVAV Write Cycle Time 25 35 45 ns t PWE t WLWH, t WLEH Write Pulse Width 20 25 30 ns t SCE t ELWH, t ELEH Chip Enable To End o...

Page 12 - DATA VALID; ADDRESS

CY14E256L Document Number: 001-06968 Rev. *F Page 12 of 18 Software Controlled STORE/RECALL Cycle The software controlled STORE/RECALL cycle follows. [19] Parameter Alt Description 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max t RC [16] t AVAV STORE/RECALL Initiation Cycle Time 25 35 45 ns t SA [18...

Page 13 - Hardware STORE Cycle

CY14E256L Document Number: 001-06968 Rev. *F Page 13 of 18 Hardware STORE Cycle Parameter Alt Description CY14E256L Unit Min Max t DHSB [16, 20] t RECOVER, t HHQX Hardware STORE High to Inhibit Off 700 ns t PHSB t HLHX Hardware STORE Pulse Width 15 ns t HLBL Hardware STORE Low to STORE Busy 300 ns S...

Page 15 - Package Diagram; PIN 1 ID; REFERENCE JEDEC MO-119

CY14E256L Document Number: 001-06968 Rev. *F Page 15 of 18 Package Diagram Figure 14. 32-Pin (300 Mil) SOIC (51-85127) 51-85058 *A PIN 1 ID SEATING PLANE 1 16 17 32 DIMENSIONS IN INCHES[MM] MIN.MAX. 0.292[7.416]0.299[7.594] 0.405[10.287]0.419[10.642] 0.050[1.270] TYP. 0.090[2.286]0.100[2.540] 0.004[...

Page 17 - Document History Page; Submission

CY14E256L Document Number: 001-06968 Rev. *F Page 17 of 18 Document History Page Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM Document Number: 001-06968 Rev. ECN No. Submission Date Orig. of Change Description of Change ** 427789 See ECN TUP New data sheet *A 437321 See ECN TUP Show data shee...