Texas Instruments TMS320F20x/F24x DSP - Manuals
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Manual Texas Instruments TMS320F20x/F24x DSP
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IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being r...
iii PRELIMINARY Preface Read This First About This Manual This reference guide describes the operation of the embedded flash EEPROMmodule on the TMS320F20x/F24x digital signal processor (DSP) devices andprovides sample code that you can use in developing your own software. Theperformance specificati...
PRELIMINARY iv PRELIMINARY If you are looking for in-formation about: Turn to these locations: Over-erasure (depletion) andrecovery Section 1.1, Basic Concepts of Flash Memory TechnologySection 2.7, Recovering From Over-Erasure (Flash-Write Operation)Section 3.4, Flash-Write Algorithm Programming th...
Related Documentation From Texas Instruments PRELIMINARY v Read This First PRELIMINARY Related Documentation From Texas Instruments The following books describe the ’F20x/24x and related support tools. To ob-tain a copy of any of these TI documents, call the Texas Instruments LiteratureResponse Cent...
Related Documentation From Texas Instruments PRELIMINARY vi PRELIMINARY TMS320C2xx C Source Debugger User’s Guide (literature number SPRU151) tells you how to invoke the ’C2xx emulator and simulator ver-sions of the C source debugger interface. This book discusses variousaspects of the debugger inte...
If You Need Assistance . . . PRELIMINARY vii Read This First PRELIMINARY If You Need Assistance . . . - World-Wide Web Sites TI Online http://www.ti.com Semiconductor Product Information Center (PIC) http://www.ti.com/sc/docs/pic/home.htm DSP Solutions http://www.ti.com/dsps 320 Hotline On-line t ht...
Contents ix Contents 1 Introduction 1 Ć 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Discusses basic flash memory technology; summarizes the features and benefits of theTMS320F20x/F24x flash module 1.1 Bas...
Figures xi Contents Figures 1–1 TMS320F20x/F24x Program Space Memory Maps 1 Ć 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–1 Flash Memory Logic Levels During Programming and Erasing 2 Ć 4 . . . . . . . . . . . . . . . . . . . . . . 2–2 Memory Maps in Register and Array Access ...
Tables xii Tables 1–1 TMS320 Devices With On-Chip Flash EEPROM 1 Ć 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–1 Operations that Modify the Contents of the Flash Array 2 Ć 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–2 Flash Module Control Registers 2 Ć 8 ....
1-1 Introduction The TMS320F20x/F24x digital signal processors (DSPs) contain on-chip flashEEPROM (electrically-erasable programmable read-only memory). The em-bedded flash memory provides an attractive alternative to masked programROM. Like ROM, flash memory is nonvolatile, but it has an advantage ...
Basic Concepts of Flash Memory Technology PRELIMINARY 1-2 PRELIMINARY 1.1 Basic Concepts of Flash Memory Technology The term flash in this EEPROM technology refers to the speed of some of theoperations performed on the memory (these operations will be described ingreater detail later in this documen...
TMS320F20x/F24x Flash Module PRELIMINARY 1-3 Introduction PRELIMINARY 1.2 TMS320F20x/F24x Flash Module The ’F20x/F24x flash EEPROM is implemented with one or two independentflash memory modules of 8K or 16K words. Each flash module is composedof a flash memory array, four control registers, and circ...
2-1 Flash Operations and Control Registers The operations that modify the contents of the ’F20x/F24x flash array are per-formed in software through the use of dedicated programming algorithms. Thischapter introduces the operations performed by these algorithms and explainsthe role of the control reg...
Operations that Modify the Contents of the ’F20x/F24x Flash Array PRELIMINARY 2-2 PRELIMINARY 2.1 Operations that Modify the Contents of the ’F20x/F24x Flash Array Operations that modify the contents of the flash array are generically referredto as either “programming,” which drives one or more bits...
Operations that Modify the Contents of the ’F20x/F24x Flash Array PRELIMINARY 2-3 Flash Operations and Control Registers PRELIMINARY This procedure is discussed in complete detail in Chapter 3. During these operations that are used to modify the contents of the flash array,three special read modes, ...
Operations that Modify the Contents of the ’F20x/F24x Flash Array PRELIMINARY 2-4 PRELIMINARY Figure 2–1. Flash Memory Logic Levels During Programming and Erasing Erase operation Depletion Mode Logic 1 1 Margin 0 Margin Logic 0 VER0 Erase (Towards logic Clear Program Flash Write (Towards logic Refer...
Accessing the Flash Module PRELIMINARY 2-5 Flash Operations and Control Registers PRELIMINARY 2.2 Accessing the Flash Module In addition to the flash memory array, each flash module has four registers thatcontrol operations on the flash array. These registers are: Segment control register (SEG_CTR) ...
Accessing the Flash Module PRELIMINARY 2-6 PRELIMINARY Figure 2–2. Memory Maps in Register and Array Access Modes SEG_CTR register TST register WADRS register WDATA register Flash memory array Flash access control register (single bit) MODE = 1: Array-access modeMODE = 0: Register access mode 0100 ....
Accessing the Flash Module PRELIMINARY 2-7 Flash Operations and Control Registers PRELIMINARY Although the function is the same, the access control registers of the ’F206 de-vice are mapped at different addresses from that of the ’F24x devices, andtheir values are modified in a different way. 2.2.2 ...
Flash Module Control Registers PRELIMINARY 2-8 PRELIMINARY 2.3 Flash Module Control Registers Table 2–2 lists the control registers and their relative addresses within the fourlocations that repeat throughout the module’s address range. Table 2–2. Flash Module Control Registers Relative Register Des...
Flash Module Control Registers PRELIMINARY 2-9 Flash Operations and Control Registers PRELIMINARY Table 2–3. Segment Control Register Field Descriptions Bits Name Description 15–8 SEG7–SEG0 Segment enable bits. Each of these bits protects the specified segment against pro-gramming or enables program...
Flash Module Control Registers PRELIMINARY 2-10 PRELIMINARY Table 2–4. Flash Array Segments Summary SEG7–SEG0 Bits ’F206/F240 Flash Module † ’F241/F243 Array Segment 15 14 13 12 11 10 9 8 Flash0 Flash1 F241/F243 Flash Module Array Segment Enabled 0 0 0 0 0 0 0 1 0000–07FFh 4000–47FFh 0000–03FFh 0 0 ...
Erase Operation PRELIMINARY 2-14 PRELIMINARY 2.6 Erase Operation The erase operation of the ’F20x/F24x flash module prepares the flash arrayfor programming and enables reprogrammability of the flash array. Before thearray can be erased, all bits must be programmed to 0s. This procedure of pro-grammi...
Recovering From Over-Erasure (Flash-Write Operation) PRELIMINARY 2-15 Flash Operations and Control Registers PRELIMINARY 2.7 Recovering From Over-Erasure (Flash-Write Operation) Generally, not all bits in the flash array have the same amount of charge re-moved with each erase pulse. By the time all ...
3-1 Algorithm Implementations and Software Considerations This chapter discusses the implementations of the algorithms for performingthe operations described in the previous chapter. It also discusses items youmust consider when incorporating the algorithms into your ’F20x/F24x DSPapplication code. ...
How the Algorithms Fit Into the Program-Erase-Reprogram Flow PRELIMINARY 3-3 Algorithm Implementations and Software Considerations PRELIMINARY Figure 3–1. Algorithms in the Overall Flow Flash-write algorithm Erase algorithm Clear algorithm X = X+1 flash-write Recover using Fail Yes No X < 10 ? ar...
Programming (or Clear) Algorithm PRELIMINARY 3-4 PRELIMINARY 3.2 Programming (or Clear) Algorithm The programming algorithm sequentially writes any number of addresses witha specified bit pattern.This algorithm is used to program application code ordata into the flash array. With a slight modificati...
Programming (or Clear) Algorithm PRELIMINARY 3-5 Algorithm Implementations and Software Considerations PRELIMINARY The main feature of the program/clear algorithm is the concept of program-ming an entire row of bits in a group. The ’F20x/F24x flash array is organizedin rows of 32 words. That is, add...
Programming (or Clear) Algorithm PRELIMINARY 3-6 PRELIMINARY Figure 3–3. Programming or Clear Algorithm Flow Same row Device failure Continue Current address > end address? No Yes Row_done = true? No Yes No Yes End of row? No Yes Pulsecount =max†? Apply program pulse; row_done = false Increment a...
Programming (or Clear) Algorithm PRELIMINARY 3-7 Algorithm Implementations and Software Considerations PRELIMINARY Another important consideration is the total amount of time required to do theprogramming. The number of programming pulses required to completely pro-gram a flash memory cell increases...
Erase Algorithm PRELIMINARY 3-10 PRELIMINARY 3.3 Erase Algorithm The erase algorithm follows the clear algorithm in executing the entire initial-ization flow. Figure 3–4 highlights the erase algorithm’s place in the overallflow. Figure 3–4. Erase Algorithm in the Overall Flow Flash-write algorithm E...
Erase Algorithm PRELIMINARY 3-11 Algorithm Implementations and Software Considerations PRELIMINARY Table 3–2. Steps for Applying One Erase Pulse Step Action Description 1 Power up the V CCP pin. Set V CCP pin to V DD. If the V CCP pin for the flash module to be erased is not set to V DD , then the a...
Erase Algorithm PRELIMINARY 3-12 PRELIMINARY 4) The actual address is restored. 5) The contents of the restored address are read. The advantage of this approach is that it forces the worst-case switching condi-tion on the flash addressing logic during the reads, thus improving the marginof the erase...
Erase Algorithm PRELIMINARY 3-13 Algorithm Implementations and Software Considerations PRELIMINARY Figure 3–5. Erase Algorithm Flow Program array check Á Á Depletion Yes No Á Á All 32 words = 0000h? Read first 32 words Wait for t d(BUSY-INVERSE) Set VER0 and VER1 bits in SEG_CTR Á Á Clear all bits i...
Flash-Write Algorithm PRELIMINARY 3-14 PRELIMINARY 3.4 Flash-Write Algorithm The flash-write operation recovers bits in depletion mode, which can becaused by over-erasure. The flash-write algorithm’s place in the overall flowis highlighted in Figure 3–6. Figure 3–6. Flash-Write Algorithm in the Over...
Flash-Write Algorithm PRELIMINARY 3-15 Algorithm Implementations and Software Considerations PRELIMINARY Table 3–3. Steps for Applying One Flash-Write Pulse Steps Action Description 1 Power up the V CCP pin. Set the V CCP pin to V DD . If the V CCP pin for the flash module to be re- covered is not s...
A-1 Appendix A Assembly Source Listings and Program Examples The flash array is erased and programmed by code running on the DSP core.This code can originate from off-chip memory or can be loaded into on-chipRAM. The available flash programming tools for the ’F20x/F24x allow you toprogram the on-chi...
Assembly Source for Algorithms PRELIMINARY A-2 PRELIMINARY A.1 Assembly Source for Algorithms The algorithm source files implement the flows given in Chapter 3. Each algo-rithm is written as an assembly language subroutine, beginning with a label atan entry point and ending with a return instruction...
Assembly Source for Algorithms PRELIMINARY A-5 Assembly Source Listings and Program Examples PRELIMINARY A.1.2 Clear Algorithm, SCLR20.ASM This code is an implementation of the clear (programming) algorithm de-scribed in section 3.2 on page 3-4. Recall that the clear algorithm is identical tothe pro...
Sample Assembly Code to Erase and Reprogram the TMS320F206 PRELIMINARY A-35 Assembly Source Listings and Program Examples PRELIMINARY prg_error:********************************************************** If here, then an error has occurred during ** ** programming. In an actual application, the syste...
Sample C Code to Erase and Reprogram the TMS320F206 PRELIMINARY A-37 Assembly Source Listings and Program Examples PRELIMINARY A.4 Sample C Code to Erase and Reprogram the TMS320F206 Because the algorithm implementations do not follow the C-calling conventionof the ’C2000 C environment, they cannot ...
Sample C Code to Erase and Reprogram the TMS320F206 PRELIMINARY A-38 PRELIMINARY { /*Flash fails programming, EXIT*/ while(1){} /*Spin here forever*/ } } else{ /*Flash fails erase, EXIT*/ while(1){} /*Spin here forever*/ } } A.4.2 Linker Command File for TMS320F206 Sample C Code /*******************...
Sample Assembly Code to Erase and Reprogram the TMS320F240 PRELIMINARY A-45 Assembly Source Listings and Program Examples PRELIMINARY A.5.2 Linker Command File for TMS320F240 Sample Assembly Code /************************************************************//* Filename: ASMEXA24.CMD */ /* Descriptio...
Using the Algorithms With C Code to Erase and Reprogram the ’F240 PRELIMINARY A-48 PRELIMINARY extern int erase(); /* Declare external func for flash erase. */ extern int program(); /* Declare external func for flash programming */ extern c240init(); /* Declare external func for C240 register init’l...
Using the Algorithms With C Code to Erase and Reprogram the ’F240 PRELIMINARY A-50 PRELIMINARY .bss :{} > B1 PAGE 1 .cinit :{} > B1 PAGE 1 .const : load = EXTRAM PAGE 0, run = DSRAM PAGE 1 { /* GET RUN ADDRESS */ __const_run = .;/* MARK LOAD ADDRESS */*(.c_mark)/* ALLOCATE .const */ *(.const)/...
Index PRELIMINARY Index-1 PRELIMINARY Index A access modes code for changing A-25 array access 2-5, 2-10, 2-11, 2-16, 3-8 register access 2-5, 2-10, 2-11, 3-11 access–control register 2-5 to 2-7 modifying in TMS320F206 2-6 modifying in TMS320F24x 2-7 reading in TMS320F206 2-6 accessing the flash mod...
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