Cypress CY7C1475V25 - Manual

Cypress CY7C1475V25

Cypress CY7C1475V25 – Manual, read for free online in PDF format. We hope this helps you resolve any issues you may have. If you have further questions, please contact us through the contact form.

1 Page 1
2 Page 2
3 Page 3
4 Page 4
5 Page 5
6 Page 6
7 Page 7
8 Page 8
9 Page 9
10 Page 10
11 Page 11
12 Page 12
13 Page 13
14 Page 14
15 Page 15
16 Page 16
17 Page 17
18 Page 18
19 Page 19
20 Page 20
21 Page 21
22 Page 22
23 Page 23
24 Page 24
25 Page 25
26 Page 26
27 Page 27
28 Page 28
29 Page 29
30 Page 30
31 Page 31
32 Page 32
Page: / 32

Table of Contents:

  • Page 4 – Pin Configurations
  • Page 6 – TMS
  • Page 8 – Pin Definitions
  • Page 9 – Functional Overview; “Truth Table for
  • Page 10 – Interleaved Burst Address Table; Linear Burst Address Table
  • Page 11 – Truth Table
  • Page 13 – Disabling the JTAG Feature; TAP; Performing a TAP Reset; TAP Controller State Diagram; TAP Controller Block Diagram
  • Page 14 – TAP Registers; TAP Instruction Set
  • Page 15 – BYPASS; TAP Timing; T e st Clo ck
  • Page 16 – TAP AC Switching Characteristics
  • Page 17 – T D O
  • Page 18 – Scan Register Sizes; Register Name; Identification Codes; Instruction
  • Page 21 – Electrical Characteristics
  • Page 23 – Switching Characteristics
  • Page 24 – Switching Waveforms; Figure 1
  • Page 26 – Mode Timing; CLK
  • Page 27 – Ordering Information; for actual products offered.
  • Page 28 – Package Diagrams
  • Page 31 – Document History Page; with NoBLTM Architecture
Loading the manual

72-Mbit (2M x 36/4M x 18/1M x 72)

Flow-Through SRAM with NoBL™ Architecture

CY7C1471V25
CY7C1473V25
CY7C1475V25

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05287 Rev. *I

Revised July 04, 2007

Features

• No Bus Latency™ (NoBL™) architecture eliminates dead

cycles between write and read cycles

• Supports up to 133 MHz bus operations with zero wait states
• Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™ devices
• Internally self timed output buffer control to eliminate the

need to use OE

• Registered inputs for flow through operation
• Byte Write capability
• 2.5V/1.8V IO supply (V

DDQ

)

• Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

• Clock Enable (CEN) pin to enable clock and suspend

operation

• Synchronous self timed writes
• Asynchronous Output Enable (OE)
• CY7C1471V25, CY7C1473V25 available in

JEDEC-standard Pb-free 100-pin TQFP, Pb-free and

non-Pb-free 165-Ball FBGA package. CY7C1475V25

available in Pb-free and non-Pb-free 209-Ball FBGA

package.

• Three Chip Enables (CE

1

, CE

2

, CE

3

) for simple depth

expansion.

• Automatic power down feature available using ZZ mode or

CE deselect.

• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst Capability - linear or interleaved burst order
• Low standby power

Functional Description

[1]

The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are

2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst

SRAMs designed specifically to support unlimited true

back-to-back read or write operations without the insertion of

wait states. The CY7C1471V25, CY7C1473V25, and

CY7C1475V25 are equipped with the advanced No Bus

Latency (NoBL) logic required to enable consecutive read or

write operations with data transferred on every clock cycle.

This feature dramatically improves the throughput of data

through the SRAM, especially in systems that require frequent

write-read transitions.
All synchronous inputs pass through input registers controlled

by the rising edge of the clock. The clock input is qualified by

the Clock Enable (CEN) signal, which when deasserted

suspends operation and extends the previous clock cycle.

Maximum access delay from the clock rise is 6.5 ns (133-MHz

device).
Write operations are controlled by two or four Byte Write Select

(BW

X

) and a Write Enable (WE) input. All writes are conducted

with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide easy bank

selection and output tri-state control. To avoid bus contention,

the output drivers are synchronously tri-stated during the data

portion of a write sequence.

Selection Guide

133 MHz

100 MHz

Unit

Maximum Access Time

6.5

8.5

ns

Maximum Operating Current

305

275

mA

Maximum CMOS Standby Current

120

120

mA

Note

1. For best practice recommendations, refer to the Cypress application note

AN1064, SRAM System Guidelines

.

[+] Feedback

"Loading the manual" means you need to wait until the file loads and becomes available for online reading. Some manuals are very large, and the time they take to appear depends on your internet speed.

Summary

Page 4 - Pin Configurations

CY7C1471V25CY7C1473V25CY7C1475V25 Document #: 38-05287 Rev. *I Page 4 of 32 Pin Configurations 100-Pin TQFP Pinout A A A A A1 A0 NC/ 288M NC /144M V SS V DD A A A A A A DQP B DQ B DQ B V DDQ V SS DQ B DQ B DQ B DQ B V SS V DDQ DQ B DQ B V SS NC V DD DQ A DQ A V DDQ V SS DQ A DQ A DQ A DQ A V SS V DD...

Page 6 - TMS

CY7C1471V25CY7C1473V25CY7C1475V25 Document #: 38-05287 Rev. *I Page 6 of 32 Pin Configurations (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1471V25 (2M x 36) 2 3 4 5 6 7 1 ABCD E F G H J K L M N P R TDO NC/576M NC/1G DQP C DQ C DQP D NC DQ D CE 1 BW B CE 3 BW C CEN A CE2 DQ C DQ D DQ D MO...

Page 8 - Pin Definitions

CY7C1471V25CY7C1473V25CY7C1475V25 Document #: 38-05287 Rev. *I Page 8 of 32 Pin Definitions Name IO Description A 0 , A 1 , A Input- Synchronous Address Inputs used to select one of the address locations . Sampled at the rising edge of the CLK. A [1:0] are fed to the two-bit burst counter. BW A , BW...

Other Cypress Models

All Cypress Other