Cypress CY7C1353G - Manual

Cypress CY7C1353G

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Table of Contents:

  • Page 2 – Selection Guide; Unit; Pin Configuration
  • Page 3 – Pin Definitions
  • Page 4 – Functional Overview; Single Read Accesses
  • Page 5 – Interleaved Burst Address Table; ZZ Mode Electrical Characteristics
  • Page 6 – Partial Truth Table for Read/Write; Function
  • Page 7 – Electrical Characteristics
  • Page 9 – Switching Characteristics
  • Page 10 – Switching Waveforms
  • Page 11 – NOP, STALL and DESELECT Cycles; ZZ Mode Timing
  • Page 13 – Document History Page; Issue Date
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4-Mbit (256K x 18) Flow-through SRAM

with NoBL™ Architecture

CY7C1353G

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05515 Rev. *E

Revised July 09, 2007

Features

• Supports up to 133-MHz bus operations with zero wait

states
— Data is transferred on every clock

• Pin compatible and functionally equivalent to ZBT™ devices
• Internally self timed output buffer control to eliminate the

need to use OE

• Registered inputs for flow-through operation
• Byte Write capability
• 256K x 18 common IO architecture
• 2.5V/3.3V IO power supply (V

DDQ

)

• Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

• Clock Enable (CEN) pin to suspend operation
• Synchronous self timed writes
• Asynchronous Output Enable
• Available in Pb-free 100-Pin TQFP package
• Burst Capability — linear or interleaved burst order
• Low standby power

Functional Description

[1]

The CY7C1353G is a 3.3V, 256K x 18 Synchronous

Flow-through Burst SRAM designed specifically to support

unlimited true back-to-back Read/Write operations without the

insertion of wait states. The CY7C1353G is equipped with the

advanced No Bus Latency™ (NoBL™) logic required to

enable consecutive Read/Write operations with data being

transferred on every clock cycle. This feature dramatically

improves the throughput of data through the SRAM, especially

in systems that require frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled

by the rising edge of the clock. The clock input is qualified by

the Clock Enable (CEN) signal, which when deasserted

suspends operation and extends the previous clock cycle.

Maximum access delay from the clock rise is 6.5 ns (133-MHz

device).
Write operations are controlled by the two Byte Write Select

(BW

[A:B]

) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output tri-state control. To avoid bus contention,

the output drivers are synchronously tri-stated during the data

portion of a write sequence.

Note:

1.For best-practices recommendations, please refer to the Cypress application note

System Design Guidelines

on www.cypress.com.

C

MODE

BW

A

BW

B

WE

CE

1

CE

2

CE

3

OE

READ LOGIC

DQs
DQP

A

DQP

B

MEMORY

ARRAY

E

INPUT

REGISTER

ADDRESS
REGISTER

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

BURST

LOGIC

A0'

A1'

D1
D0

Q1
Q0

A0

A1

ADV/LD

CE

ADV/LD

C

CLK

CEN

WRITE

DRIVERS

D
A

T

A

S
T
E
E

R

I

N
G

S
E

N

S
E

A

M

P
S

WRITE ADDRESS

REGISTER

A0, A1, A

O
U

T
P

U

T

B

U

F
F
E

R

S

E

ZZ

SLEEP

CONTROL

Logic Block Diagram

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Summary

Page 2 - Selection Guide; Unit; Pin Configuration

CY7C1353G Document #: 38-05515 Rev. *E Page 2 of 13 Selection Guide 133 MHz 100 MHz Unit Maximum Access Time 6.5 8.0 ns Maximum Operating Current 225 205 mA Maximum CMOS Standby Current 40 40 mA Pin Configuration 100-Pin TQFP Pinout A A A A A1 A0 NC/28 8M NC/ 14 4M V SS V DD NC/36M A A A A A A ANCNC...

Page 3 - Pin Definitions

CY7C1353G Document #: 38-05515 Rev. *E Page 3 of 13 Pin Definitions Name IO Description A 0 , A 1 , A Input- Synchronous Address Inputs used to select one of the 256K address locations . Sampled at the rising edge of the CLK. A [1:0] are fed to the two-bit burst counter. BW [A:B] Input- Synchronous ...

Page 4 - Functional Overview; Single Read Accesses

CY7C1353G Document #: 38-05515 Rev. *E Page 4 of 13 Functional Overview The CY7C1353G is a synchronous flow-through burst SRAM designed specifically to eliminate wait states during Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock....

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