Panasonic MA3S132D - Manual
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Table of Contents:
- Page 2 – Characteristics charts of MA3S132D; Reverse voltage V; Ambient temperature T; Ambient temperature T; Terminal capacitance C; Pulse width t
- Page 3 – Characteristics charts of MA3S132E; Forward surge current I
- Page 4 – semiconductors described in this book; ucts may directly jeopardize life or harm the human body.
Switching Diodes
1
Publication date: March 2004
SKF00024BED
Note) *: t
=
1 s
MA3S132D
(MA132WA)
, MA3S132E
(MA132WK)
Silicon epitaxial planar type
For switching circuits
■
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
•
Two isolated elements contained in one package, allowing high-
density mounting
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse voltage
V
R
I
R
=
100
µ
A
80
V
Reverse current
I
R
V
R
=
75 V
100
nA
Terminal capacitance
MA3S132D
C
t
V
R
=
0 V, f
=
1 MHz
15
pF
MA3S132E
2
Reverse recovery time
*
MA3S132D
t
rr
I
F
=
10 mA, V
R
=
6 V
10
ns
MA3S132E
I
rr
=
0.1 I
R
, R
L
=
100
Ω
3
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
Marking Symbol:
•
MA3S132D: MO
•
MA3S132E: MU
Internal Connection
1
2
3
1
3
2
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
Single
I
F
100
mA
Double
150
Peak forward
Single
I
FM
225
mA
current
Double
340
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
750
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
Cathode
0.28
±
0.05
3
1
2
0.28
±
0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
(0.51)
0 to 0.1
(0.15)
3˚
(0.44)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3˚
D
E
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Summary
2 MA3S132D, MA3S132E SKF00024BED I F V F I R V R V F T a I R T a C t V R I F(surge) t W Characteristics charts of MA3S132D 10 − 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 − 1 1 10 10 2 10 3 Forward voltage V F (V) Forward current I F ( mA ) T a = 150 ° C 100 ° C 25 ° C − 20 ° C 10 − 1 0 20 40 60 80 ...
MA3S132D, MA3S132E 3 SKF00024BED Characteristics charts of MA3S132E I F V F I R V R V F T a I R T a C t V R I F(surge) t W 10 − 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 − 1 1 10 10 2 10 3 Forward voltage V F (V) Forward current I F ( mA ) T a = 150 ° C 100 ° C 25 ° C − 20 ° C 1 0 20 40 60 80 100 1...
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country...
