Cypress CY7C199 - Manual
Cypress CY7C199 – Manual, read for free online in PDF format. We hope this helps you resolve any issues you may have. If you have further questions, please contact us through the contact form.
Table of Contents:
- Page 2 – CC; Electrical Characteristics
- Page 4 – Parameter; Data Retention Waveform
- Page 5 – Switching Characteristics; Unit
- Page 6 – Switching Waveforms; ADDRESS
- Page 9 – Truth Table; Ordering Information; TYPICAL POWER-ON CURRENT; A t; TYPICAL ACCESS TIME CHANGE; NORMA; NORMALIZED I
- Page 12 – Package Diagrams
- Page 13 – 8-Pin Rectangular Leadless Chip Carrier L54
- Page 15 – 8-Lead Thin Small Outline Package Z28
- Page 16 – Description of Change; SZV
32K x 8 Static RAM
CY7C199
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05160 Rev. **
Revised September 7, 2001
99
Features
• High speed
— 10 ns
• Fast t
DOE
• CMOS for optimum speed/power
• Low active power
— 467 mW (max, 12 ns “L” version)
• Low standby power
— 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE) and active LOW
Output Enable (OE) and three-state drivers. This device has
an automatic power-down feature, reducing the power con-
sumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Selection Guide
7C199-8
7C199-10
7C199-12
7C199-15
7C199-20
7C199-25
7C199-35
7C199-45
Maximum Access Time (ns)
8
10
12
15
20
25
35
45
Maximum Operating
Current (mA)
120
110
160
155
150
150
140
140
L
90
90
90
90
80
70
Maximum CMOS
Standby Current (mA)
0.5
0.5
10
10
10
10
10
10
L
0.05
0.05
0.05
0.05
0.05
0.05
Shaded area contains advance information.
Logic Block Diagram
Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODE
R
SENS
E
AM
PS
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
DIP / SOJ / SOIC
12
13
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
WE
V
CC
A
4
A
3
A
2
A
1
I/O
7
I/O
6
I/O
5
I/O
4
A
14
A
5
I/O
0
I/O
1
I/O
2
CE
OE
A
0
I/O
3
1024 x 32 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
9
A
0
A
11
A
13
A
12
A
14
A
10
28
4
5
6
7
8
9
10
3 2 1
27
1314151617
26
25
24
23
22
21
20
11
12
19
18
A
7
V
CC
I/O
5
GND
WE
A
6
A
5
I/O
4
I/O
3
I/O
2
A
8
A
9
A
10
A
11
A
12
A
13
A
14
CE
A
3
A
2
A
1
A
0
I/O
1
I/O
7
I/O
6
A
4
OE
I/O
0
Top View
LCC
C199–1
C199–2
C199–3
22
23
24
25
26
27
28
1
2
5
10
11
15
14
13
12
16
19
18
17
3
4
20
21
7
6
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
0
CE
I/O
7
I/O
6
I/O
5
GND
I/O
2
I/O
1
I/O
4
I/O
0
A
14
A
10
A
11
A
13
A
12
C199–4
I/O
3
TSOP I
Top View
(not to scale)
"Loading the manual" means you need to wait until the file loads and becomes available for online reading. Some manuals are very large, and the time they take to appear depends on your internet speed.
Summary
CY7C199 Document #: 38-05160 Rev. ** Page 2 of 16 Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ................................. –65 ° C to +150 ° C Ambient Temperature withPower Applied ............................................
CY7C199 Document #: 38-05160 Rev. ** Page 4 of 16 AC Test Loads and Waveforms [5] Data Retention Characteristics Over the Operating Range (L version only) Parameter Description Conditions [6] Min. Max. Unit V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current Com’l V CC = V DR = 2.0V, CE...
CY7C199 Document #: 38-05160 Rev. ** Page 5 of 16 Switching Characteristics Over the Operating Range [3, 7] 7C199-8 7C199-10 7C199-12 7C199-15 Unit Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. READ CYCLE t RC Read Cycle Time 8 10 12 15 ns t AA Address to Data Valid 8 10 12 15 ns t O...
