Cypress CY7C185 - Manual
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Table of Contents:
- Page 2 – CC; Electrical Characteristics
- Page 4 – Switching Characteristics; Parameter
- Page 5 – Switching Waveforms
- Page 7 – Typical DC and AC Characteristics; AMBIENT TEMPERATURE (; NORMALIZED I
- Page 9 – Package Diagrams
8K x 8 Static RAM
fax id: 1013
CY7C185
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
August 12, 1998
Features
• High speed
— 15 ns
• Fast t
DOE
• Low active power
— 715 mW
• Low standby power
— 220 mW
• CMOS for optimum speed/power
• Easy memory expansion with CE
1
, CE
2
, and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C185 is a high-performance CMOS static RAM orga-
nized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE
1
), an active HIGH
chip enable (CE
2
), and active LOW output enable (OE) and
three-state drivers. This device has an automatic power-down
feature (CE
1
or CE
2
), reducing the power consumption by 70%
when deselected. The CY7C185 is in a standard 300-mil-wide
DIP, SOJ, or SOIC package.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE
1
and WE in-
puts are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address
pins (A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location ad-
dressed by the information on address pins are present on the
eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to insure alpha immunity.
Logic Block Diagram
Pin Configurations
C185–1
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
10
A
9
A
11
A
12
I/O
0
C185–2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
256 x 32 x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
ROW
DECODER
SE
NSE A
M
P
S
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
DIP/SOJ/SOIC
Selection Guide
[1]
7C185–15
7C185–20
7C185–25
7C185–35
Maximum Access Time (ns)
15
20
25
35
Maximum Operating Current (mA)
130
110
100
100
Maximum Standby Current (mA)
40/15
20/15
20/15
20/15
Note:
1.
For military specifications, see the CY7C185A datasheet.
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Summary
CY7C185 2 Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ................................. –65 ° C to +150 ° C Ambient Temperature withPower Applied ............................................. –55 ° C to +125 ° C Supply Voltage ...
CY7C185 4 Switching Characteristics Over the Operating Range [5] 7C185–15 7C185–20 7C185–25 7C185–35 Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit READ CYCLE t RC Read Cycle Time 15 20 25 35 ns t AA Address to Data Valid 15 20 25 35 ns t OHA Data Hold fromAddress Change 3 5 5 5 ...
CY7C185 5 Switching Waveforms 9. Device is continuously selected. OE, CE 1 = V IL . CE 2 = V IH . 10. WE is HIGH for read cycle.11. Data I/O is High Z if OE = V IH , CE 1 = V IH , WE = V IL , or CE 2 =V IL . 12. The internal write time of the memory is defined by the overlap of CE 1 LOW, CE 2 HIGH a...
