Cypress CY7C1019D - Manual
Cypress CY7C1019D – Manual, read for free online in PDF format. We hope this helps you resolve any issues you may have. If you have further questions, please contact us through the contact form.
Table of Contents:
- Page 2 – Unit
- Page 3 – Electrical Characteristics
- Page 4 – Capacitance; Input Capacitance; pF; Output Capacitance; Thermal Resistance; AC Test Loads and Waveforms; GND
- Page 5 – Switching Characteristics
- Page 7 – Switching Waveforms
- Page 8 – Truth Table; Ordering Information
- Page 9 – Package Diagrams
- Page 11 – Document History Page; Issue Date
CY7C1019D
1-Mbit (128K x 8) Static RAM
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 38-05464 Rev. *E
Revised February 22, 2007
Features
• Pin- and function-compatible with CY7C1019B
• High speed
— t
AA
= 10 ns
• Low active power
— I
CC
= 80 mA @ 10 ns
• Low CMOS standby power
— I
SB2
= 3 mA
• 2.0V Data retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Center power/ground pinout
• Easy memory expansion with CE
and OE options
• Functionally equivalent to CY7C1019B
• Available in Pb-free 32-pin 400-Mil wide Molded SOJ and
32-pin TSOP II packages
Functional Description
[1]
The CY7C1019D is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected. The eight input
and output pins (IO
0
through IO
7
) are placed in a
high-impedance state when:
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• When the write operation is active (CE LOW, and WE LOW).
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the eight IO pins (IO
0
through IO
7
) is then written into the location specified on the
address pins (A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the IO pins.
Logic Block Diagram
A0
IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A1
A2
A3
A4
A5
A6
A7
A8
A
9
SENSE AMPS
POWER
DOWN
CE
WE
OE
A
10
A
11
A
12
A
13
A
14
ROW DECODER
COLUMN DECODER
128K x 8
ARRAY
INPUT BUFFER
A
15
A
16
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at
www.cypress.com
.
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Summary
CY7C1019D Document #: 38-05464 Rev. *E Page 2 of 11 Pin Configuration Selection Guide –10 (Industrial) Unit Maximum Access Time 10 ns Maximum Operating Current 80 mA Maximum Standby Current 3 mA Top View SOJ/TSOPII 1 23 4 56 7891011 14 19 20 24 232221 25 28 2726 12 13 29 32 3130 16 15 17 18 A 7 A 1 ...
CY7C1019D Document #: 38-05464 Rev. *E Page 3 of 11 Maximum Ratings Exceeding the maximum ratings may impair the useful life ofthe device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature withPower Applied ..................
CY7C1019D Document #: 38-05464 Rev. *E Page 4 of 11 Capacitance [3] Parameter Description Test Conditions Max Unit C IN Input Capacitance T A = 25°C, f = 1 MHz, V CC = 5.0V 6 pF C OUT Output Capacitance 8 pF Thermal Resistance [3] Parameter Description Test Conditions 400-Mil Wide SOJ TSOP II Unit Θ...
