Cypress CY7C1019CV33 - Manual

Cypress CY7C1019CV33

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Table of Contents:

  • Page 2 – Unit
  • Page 3 – Electrical Characteristics
  • Page 4 – Parameter; GND
  • Page 5 – Switching Waveforms
  • Page 6 – CE
  • Page 8 – Package Diagrams
  • Page 10 – Document History Page; Issue
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128K x 8 Static RAM

CY7C1019CV33

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05130 Rev. *F

Revised August 3, 2006

Features

• Pin and function compatible with CY7C1019BV33

• High speed

— t

AA

= 10 ns

• CMOS for optimum speed/power

• Data retention at 2.0V

• Center power/ground pinout

• Automatic power-down when deselected

• Easy memory expansion with CE

and OE options

• Available in Pb-free and non Pb-free 48-ball VFBGA,

32-pin TSOP II and 400-mil SOJ package

Functional Description

The CY7C1019CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This

device has an automatic power-down feature that significantly
reduces power consumption when deselected.

Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O

0

through I/O

7

) is then written into the location

specified on the address pins (A

0

through A

16

).

Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.

The eight input/output pins (I/O

0

through I/O

7

) are placed in a

high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).

The CY7C1019CV33 is available in Standard 48-ball FBGA,
32-pin TSOP II and 400-mil-wide SOJ packages

14

15

Logic Block Diagram

Pin Configuration

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

COLUMN

DECODER

RO

W

D

E

CO

D

E

R

SE

NSE AM

PS

INPUT BUFFER

POWER

DOWN

WE

OE

I/O

0

I/O

1

I/O

2

I/O

3

128K x 8

ARRAY

I/O

7

I/O

6

I/O

5

I/O

4

A

0

A

11

A

13

A

12

A

A

10

CE

A

A

16

A

9

1

2
3

4

5
6

7
8
9
10
11

14

19

20

24

23
22
21

25

28

27
26

Top View

SOJ/TSOP II

12

13

29

32

31
30

16

15

17

18

A

7

A

1

A

2

A

3

CE

I/O

0

I/O

1

V

CC

A

13

A

16

A

15

OE
I/O

7

I/O

6

A

12

A

11

A

10

A

9

I/O

2

A

0

A

4

A

5

A

6

I/O

4

V

CC

I/O

5

A

8

I/O

3

WE

V

SS

A

14

V

SS

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Summary

Page 2 - Unit

CY7C1019CV33 Document #: 38-05130 Rev. *F Page 2 of 10 Pin Configuration [1] Selection Guide -10 -12 -15 Unit Maximum Access Time 10 12 15 ns Maximum Operating Current 80 75 70 mA Maximum Standby Current 5 5 5 mA Note: 1. NC pins are not connected on the die. WE V CC A 9 A 16 NC A 4 A 2 A 1 CE NC I/...

Page 3 - Electrical Characteristics

CY7C1019CV33 Document #: 38-05130 Rev. *F Page 3 of 10 Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature withPower Applied ...........................................

Page 4 - Parameter; GND

CY7C1019CV33 Document #: 38-05130 Rev. *F Page 4 of 10 AC Test Loads and Waveforms [4] Switching Characteristics Over the Operating Range [5] Parameter Description -10 -12 -15 Unit Min. Max. Min. Max. Min. Max. Read Cycle t RC Read Cycle Time 10 12 15 ns t AA Address to Data Valid 10 12 15 ns t OHA ...

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