Cypress CY62256 - Manual
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Table of Contents:
- Page 2 – Operating Range; CC; Electrical Characteristics
- Page 4 – Switching Characteristics; Parameter; Switching Waveforms; ADDRESS
- Page 7 – Typical DC and AC Characteristics; CURRENT; AMBIENT TEMPERATURE (; STANDBY
- Page 8 – IZ; DEL; NORM; NORMALIZED I; Truth Table; Ordering Information
- Page 9 – Package Diagrams
- Page 11 – MGN
256K (32K x 8) Static RAM
CY62256
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05248 Rev. *B
Revised August 27, 2002
Features
• High speed: 55 ns and 70 ns
• Voltage range: 4.5V–5.5V operation
• Low active power (70 ns, LL version)
— 275 mW (max.)
• Low standby power (70 ns, LL version)
— 28
µ
W (max.)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package available in a standard 450-mil-wide (300-mil
body width) 28-lead narrow SOIC, 28-lead TSOP-1,
28-lead reverse TSOP-1, and 600-mil 28-lead PDIP
packages
Functional Description
[1]
The CY62256 is a high-performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and three-state drivers. This device has an
automatic power-down feature, reducing the power
consumption by 99.9% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH.
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
COLUMN
DECODER
R
O
W
DE
CODE
R
SEN
SE AM
PS
INPUTBUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
512 x 512
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
10
A
13
A
11
A
12
A
A
14
A
1
0
Logic Block Diagram
Note:
1.
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
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Summary
CY62256 Document #: 38-05248 Rev. *B Page 2 of 11 Pin Configurations Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ................................. –65 ° C to +150 ° C Ambient Temperature withPower Applied .........................
CY62256 Document #: 38-05248 Rev. *B Page 4 of 11 Switching Characteristics Over the Operating Range [6] Parameter Description CY62256 − 55 CY62256 − 70 Unit Min. Max. Min. Max. Read Cycle t RC Read Cycle Time 55 70 ns t AA Address to Data Valid 55 70 ns t OHA Data Hold from Address Change 5 5 ns t ...
CY62256 Document #: 38-05248 Rev. *B Page 7 of 11 Typical DC and AC Characteristics 1.2 1.4 1.0 0.6 0.4 0.2 4.0 4.5 5.0 5.5 6.0 1.6 1.4 1.2 1.0 0.8 − 55 25 125 − 55 25 125 1.2 1.0 0.8 NORMA L IZ E D t AA 120 100 80 60 40 20 0.0 1.0 2.0 3.0 4.0 OUTP UT S O URCE CURR E N T ( m A ) SUPPLY VOLTAGE (V) N...
