Cypress CY62157EV30 - Manual
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Table of Contents:
- Page 2 – Product Portfolio; Pin Configuration; Notes
- Page 3 – The following picture shows the 48-ball VFBGA pinout.; Top View
- Page 4 – Electrical Characteristics; Full device AC operation assumes a 100; s wait time after V; and CE; inputs can be left floating.
- Page 5 – DATA RETENTION MODE; CE; Full device operation requires linear V; ramp from V; to V
- Page 6 – Switching Characteristics; “AC Test Loads and Waveforms” on page 5
- Page 7 – Switching Waveforms
- Page 8 – or CE; goes HIGH and CE; , the output remains in a high impedance state.
- Page 9 – HZWE
- Page 11 – Package Diagrams
- Page 14 – Document History Page; Change
8-Mbit (512K x 16) Static RAM
CY62157EV30 MoBL
®
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 38-05445 Rev. *E
Revised May 07, 2007
Features
• TSOP I package configurable as 512K x 16 or as 1M x 8
SRAM
• High speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62157DV30
• Ultra low standby power
— Typical Standby current: 2
µ
A
— Maximum Standby current: 8
µ
A (Industrial)
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Easy memory expansion with CE
1
, CE
2
, and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in both Pb-free and non Pb-free 48-ball VFBGA,
Pb-free 44-pin TSOP II and 48-pin TSOP I packages
Functional Description
The CY62157EV30 is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life
™
(MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Place the device into standby mode when deselected (CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH). The input
or output pins (IO
0
through IO
15
) are placed in a high
impedance state when:
• Deselected (CE
1
HIGH or CE
2
LOW)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
• Write operation is active (CE
1
LOW, CE
2
HIGH and WE
LOW)
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from IO pins (IO
0
through IO
7
) is
written into the location specified on the address pins (A
0
through A
18
). If Byte High Enable (BHE) is LOW, then data
from IO pins (IO
8
through IO
15
) is written into the location
specified on the address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
appear on IO
0
to IO
7
. If Byte High Enable (BHE) is LOW, then
data from memory appears on IO
8
to IO
15
. See the
for a complete description of read and write
modes.
Logic Block Diagram
512K × 16 / 1M x 8
RAM Array
IO
0
–IO
7
ROW DECOD
E
R
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
SE
NSE
AMPS
DATA IN DRIVERS
OE
A
4
A
3
IO
8
–IO
15
WE
BLE
BHE
A
16
A
0
A
1
A
17
A
9
A
18
A
10
Power Down
Circuit
BHE
BLE
CE
2
CE
1
CE
2
CE
1
BYTE
Notes
1. For best practice recommendations, please refer to the Cypress application note
AN1064, SRAM System Guidelines
.
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Summary
CY62157EV30 MoBL ® Document #: 38-05445 Rev. *E Page 2 of 14 Product Portfolio Product Range V CC Range (V) Speed (ns) Power Dissipation Operating I CC , (mA) Standby, I SB2 ( µ A) f = 1MHz f = f max Min Typ [2] Max Typ [2] Max Typ [2] Max Typ [2] Max CY62157EV30LL Ind’l/Auto-A 2.2V 3.0 3.6 45 1.8 3...
CY62157EV30 MoBL ® Document #: 38-05445 Rev. *E Page 3 of 14 The following picture shows the 48-ball VFBGA pinout. [3, 4, 5] Pin Configuration (continued) WE V CC A 11 A 10 NC A 6 A 0 A 3 CE 1 IO 10 IO 8 IO 9 A 4 A 5 IO 11 IO 13 IO 12 IO 14 IO 15 V SS A 9 A 8 OE V SS A 7 IO 0 BHE CE 2 A 2 A 1 BLE V ...
CY62157EV30 MoBL ® Document #: 38-05445 Rev. *E Page 4 of 14 Maximum Ratings Exceeding maximum ratings may shorten the battery life of the device. User guidelines are not tested.Storage Temperature ................................ –65°C to + 150°CAmbient Temperature with Power Applied .................
