Cypress CY14B108L - Manual

Cypress CY14B108L

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Table of Contents:

  • Page 2 – PRELIMINARY; Pinouts; Top View; Top View
  • Page 4 – Device Operation; “Truth Table For SRAM Operations”; SRAM Read; Figure 3; Figure 3. AutoStore Mode; Hardware STORE Operation
  • Page 5 – Software STORE
  • Page 7 – Preventing AutoStore; Noise Considerations
  • Page 8 – Maximum Ratings; DC Electrical Characteristics
  • Page 9 – AC Test Conditions; Thermal Resistance; OUTPUT
  • Page 10 – AC Switching Characteristics
  • Page 13 – AutoStore/Power Up RECALL; RWI
  • Page 14 – Software Controlled STORE/RECALL Cycle; Switching Waveforms
  • Page 15 – Hardware STORE Cycle; HSB To Output Active Time when write latch not set; Hardware STORE Pulse Width; Soft Sequence Processing Time; Write latch set
  • Page 16 – Truth Table For SRAM Operations; For x8 Configuration
  • Page 17 – Ordering Information
  • Page 19 – Part Numbering Nomenclature; Cypress
  • Page 20 – Package Diagrams
  • Page 23 – Document History Page; Date
  • Page 24 – Worldwide Sales and Design Support
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PRELIMINARY

CY14B108L, CY14B108N

8 Mbit (1024K x 8/512K x 16) nvSRAM

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 001-45523 Rev. *B

Revised March 19, 2009

Features

20 ns, 25 ns, and 45 ns Access Times

Internally organized as 1024K x 8 (CY14B108L) or 512K x 16

(CY14B108N)

Hands off Automatic STORE

on power down with only a small

Capacitor

STORE

to QuantumTrap

®

nonvolatile elements initiated by

Software, device pin, or AutoStore

®

on power down

RECALL

to SRAM initiated by Software or power up

Infinite Read, Write, and RECALL Cycles

200,000 STORE

cycles to QuantumTrap

20 year data retention

Single 3V +20

%

, -10

%

operation

Commercial and Industrial Temperatures

48-ball FBGA and 44-pin and 54-pin TSOP-II packages

Pb-free and RoHS compliant

Functional Description

The Cypress CY14B108L/CY14B108N is a fast static RAM, with

a nonvolatile element in each memory cell. The memory is

organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits

each. The embedded nonvolatile elements incorporate

QuantumTrap

technology, producing the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while independent nonvolatile data resides in the highly

reliable QuantumTrap cell. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power down. On power up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

STATIC RAM

ARRAY

2048 X 2048 X 2

R

O

W

D

E

C

O

D

E

R

COLUMN I/O

COLUMN DEC

I

N

P

U

T

B

U

F

F

E

R

S

POWER

CONTROL

STORE/RECALL

CONTROL

Quatrum Trap

2048 X 2048 X 2

STORE

RECALL

V

CC

V

CAP

HSB

A

9

A

10

A

11

A

12

A

13

A

14

A

15

A

16

SOFTWARE

DETECT

A

14

- A

2

OE

CE

WE

BHE

BLE

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

A

17

A

18

DQ

0

DQ

1

DQ

2

DQ

3

DQ

4

DQ

5

DQ

6

DQ

7

DQ

8

DQ

9

DQ

10

DQ

11

DQ

12

DQ

13

DQ

14

DQ

15

A

19

Logic Block Diagram

[1, 2, 3]

Note

1. Address A

0

- A

19

for x8 configuration and Address A

0

- A

18

for x16 configuration.

2. Data DQ

0

- DQ

7

for x8 configuration and Data DQ

0

- DQ

15

for x16 configuration.

3. BHE and BLE are applicable for x16 configuration only.

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Summary

Page 2 - PRELIMINARY; Pinouts; Top View; Top View

PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 2 of 24 Pinouts Figure 1. Pin Diagram - 48 FBGA Figure 2. Pin Diagram - 44/54-Pin TSOP II WE V CC A 11 A 10 V CAP A 6 A 0 A 3 CE NC NC DQ 0 A 4 A 5 NC DQ 2 DQ 3 NC V SS A 9 A 8 OE V SS A 7 NC NC NC A 17 A 2 A 1 NC V CC DQ 4 NC DQ 5 ...

Page 4 - Device Operation; “Truth Table For SRAM Operations”; SRAM Read; Figure 3; Figure 3. AutoStore Mode; Hardware STORE Operation

PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 4 of 24 Device Operation The CY14B108L/CY14B108N nvSRAM is made up of two functional components paired in the same physical cell. They are a SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a sta...

Page 5 - Software STORE

PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 5 of 24 STORE operation is completed, the CY14B108L/CY14B108N remains disabled until the HSB pin returns HIGH. Leave the HSB unconnected if it is not used. Hardware RECALL (Power Up) During power up or after any low power condition ...

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