Cypress CY14B102L - Manual
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Table of Contents:
- Page 2 – PRELIMINARY; Pinouts; Top View
- Page 3 – Pin Definitions
- Page 4 – Device Operation; “Truth Table For SRAM Operations”; SRAM Read; Figure 4; Figure 4. AutoStore Mode; Hardware STORE Operation
- Page 5 – Software STORE
- Page 6 – Preventing AutoStore; Noise Considerations
- Page 7 – Maximum Ratings; DC Electrical Characteristics
- Page 8 – AC Test Conditions; Thermal Resistance; OUTPUT
- Page 9 – AC Switching Characteristics
- Page 12 – AutoStore/Power Up RECALL
- Page 13 – Software Controlled STORE/RECALL Cycle; Switching Waveforms
- Page 14 – Hardware STORE Cycle; HSB To Output Active Time when write latch not set; Hardware STORE Pulse Width; Soft Sequence Processing Time
- Page 15 – Truth Table For SRAM Operations; For x8 Configuration
- Page 16 – Ordering Information
- Page 19 – Part Numbering Nomenclature; Cypress
- Page 20 – Package Diagrams
- Page 23 – Document History Page; Submission
- Page 24 – Worldwide Sales and Design Support
PRELIMINARY
CY14B102L, CY14B102N
2 Mbit (256K x 8/128K x 16) nvSRAM
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 001-45754 Rev. *B
Revised November 10, 2008
Features
■
20 ns, 25 ns, and 45 ns Access Times
■
Internally organized as 256K x 8 (CY14B102L) or 128K x 16
(CY14B102N)
■
Hands off Automatic STORE
on power down with only a small
Capacitor
■
STORE
to QuantumTrap
®
nonvolatile elements initiated by
software, device pin, or AutoStore
®
on power down
■
RECALL
to SRAM initiated by software or power up
■
Infinite Read, Write, and Recall Cycles
■
200,000 STORE
cycles to QuantumTrap
■
20 year data retention
■
Single 3V +20
%
to -10
%
operation
■
Commercial, Industrial and Automotive Temperatures
■
48-ball FBGA and 44/54-pin TSOP - II packages
■
Pb-free and RoHS compliance
Functional Description
The Cypress CY14B102L/CY14B102N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 256K bytes of 8 bits each or 128K words of 16 bits
each. The embedded nonvolatile elements incorporate
QuantumTrap
technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
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Logic Block Diagram
Note
1. Address A
0
- A
17
for x8 configuration and Address A
0
- A
16
for x16 configuration.
2. Data DQ
0
- DQ
7
for x8 configuration and Data DQ
0
- DQ
15
for x16 configuration.
3. BHE and BLE are applicable for x16 configuration only.
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Summary
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev. *B Page 2 of 24 Pinouts Figure 1. Pin Diagram - 48 FBGA Figure 2. Pin Diagram - 44 Pin TSOP II 48-FBGA (not to scale) Top View (x8) 48-FBGA (not to scale) Top View (x16) WE V CC A 11 A 10 V CAP A 6 A 0 A 3 CE NC NC DQ0 A 4 A 5 NC DQ2 DQ3 NC...
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev. *B Page 3 of 24 Figure 3. Pin Diagram - 54 Pin TSOP II (x16) Pin Definitions Pin Name IO Type Description A 0 – A 17 Input Address Inputs Used to Select one of the 262,144 bytes of the nvSRAM for x8 Configuration . A 0 – A 16 Address Inputs...
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev. *B Page 4 of 24 Device Operation The CY14B102L/CY14B102N nvSRAM is made up of two functional components paired in the same physical cell. They are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a st...