Panasonic 2SD1819A - Manual
Panasonic 2SD1819A – Manual, read for free online in PDF format. We hope this helps you resolve any issues you may have. If you have further questions, please contact us through the contact form.
Transistors
1
Publication date: April 2003
SJC00226BED
2SD1819A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218A
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
20 V, I
E
=
0
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
10 V, I
B
=
0
100
µ
A
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 2 mA
160
460
h
FE2
V
CE
= 2 V, I
C
= 100 mA
90
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
100 mA, I
B
=
10 mA
0.1
0.3
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
2 mA, f
=
200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
3.5
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
2.1
±
0.1
1.3
±
0.1
0.3
+0.1
–0.0
2.0
±
0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No rank
h
FE1
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
ZQ
ZR
ZS
Z
Product of no-rank is not classified and have no marking symbol for rank.
Marking Symbol: Z
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
"Loading the manual" means you need to wait until the file loads and becomes available for online reading. Some manuals are very large, and the time they take to appear depends on your internet speed.