Panasonic 2SB1218A - Manual
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Table of Contents:
- Page 2 – Collector power dissipation P; Collector current I
- Page 3 – h Parameter; NF; Emitter current I; Emitter current I; Emitter current I
- Page 4 – semiconductors described in this book; ucts may directly jeopardize life or harm the human body.
Transistors
1
Publication date: March 2003
SJC00071BED
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■
Features
•
High forward current transfer ratio h
FE
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
45
V
Collector-emitter voltage (Base open)
V
CEO
−
45
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
100
mA
Peak collector current
I
CP
−
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
45
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
2 mA, I
B
=
0
−
45
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
20 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
10 V, I
B
=
0
−
100
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
10 V, I
C
=
−
2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
100 mA, I
B
=
−
10 mA
−
0.3
−
0.5
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
2.7
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Marking Symbol: B
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
BQ
BR
BS
B
Product of no-rank is not classified and have no marking symbol for rank.
2.1
±
0.1
1.3
±
0.1
0.3
+0.1
–0.0
2.0
±
0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10
°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Unit: mm
This product complies with the RoHS Directive (EU 2002/95/EC).
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Summary
2SB1218A 2 SJC00071BED I B V BE I C V BE V CE(sat) I C P C T a I C V CE I C I B h FE I C f T I E C ob V CB 0 160 40 120 80 0 200 160 120 80 40 Collector power dissipation P C ( mW ) Ambient temperature T a ( ° C) 0 − 12 − 10 − 8 − 2 − 6 − 4 0 − 120 − 100 − 80 − 60 − 40 − 20 T a = 2...
2SB1218A 3 SJC00071BED h Parameter V CE NF I E NF I E h Parameter I E 0.01 0.1 1 10 0 6 5 4 3 2 1 V CB = − 5 V f = 1 kHz R g = 2 k Ω T a = 25 ° C Noise figure NF ( dB ) Emitter current I E (mA) 0.1 1 10 0 20 16 12 8 4 V CB = − 5 V R g = 50 k Ω T a = 25 ° C f = 100 Hz 10 kHz 1 kHz Noise figur...
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country...
